MMBT5401-7-F Diodes BJT Transistor PNP 15V 600mA SOT-23-3

Description

MMBT5401-7-F Diodes Incorporated Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 300 mW Surface Mount SOT-23-3 RoHS

Specifications
Manufacturer: Diodes Incorporated
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: – 150 V
Collector- Base Voltage VCBO: – 160 V
Emitter- Base Voltage VEBO: – 5 V
Collector-Emitter Saturation Voltage: – 0.5 V
Maximum DC Collector Current: 0.2 A
Pd – Power Dissipation: 300 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: MMBT5401
Packaging: Cut Tape
Packaging: Reel
DC Current Gain hFE Max: 240
Height: 1 mm
Length: 3.05 mm
Technology: Si
Width: 1.4 mm
Brand: Diodes Incorporated
Continuous Collector Current: – 0.2 A
DC Collector/Base Gain hfe Min: 60
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 0.000282 oz

Manufacturer Part Number: MMBT5401-7-F

Manufacturer: Diodes Inc.