MMBT5089LT1G ON Semiconductor Transistor NPN BJT 50mA 30V SOT23

Description

ON Semiconductor MMBT5089LT1G TRANS Bipolar (BJT) Transistor NPN 25V 50mA 50MHz 300mW Surface Mount SOT-23-3 (TO-236)
This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
Features

Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT-23 Surface Mount Package Saves Board Space
Pb-Free Packages are Available
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Specifications

Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors – BJT
RoHS
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 25 V
Collector- Base Voltage VCBO: 30 V
Emitter- Base Voltage VEBO: 4.5 V
Collector-Emitter Saturation Voltage: 0.5 V
Maximum DC Collector Current: 0.05 A
Pd – Power Dissipation: 225 mW
Gain Bandwidth Product fT: 50 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: MMBT5089L
Packaging: Cut Tape
Packaging: Reel
Height: 0.94 mm
Length: 2.9 mm
Technology: Si
Width: 1.3 mm
Brand: ON Semiconductor
Continuous Collector Current: 0.05 A
DC Collector/Base Gain hfe Min: 400
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 0.000282 oz

Manufacturer Part Number: MMBT5089LT1G

Manufacturer: ON Semiconductor

Datasheet: on-semi/MMBT5088LT1-D.pdf