SI4825DDY-T1-GE3 Vishay MOSFET P-Ch 30V 14.9A 8-SOIC

Description

SI4825DDY-T1-GE3 Vishay Semiconductors ^Transistor MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R RoHS

Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 14.9 A
Rds On – Drain-Source Resistance: 12.5 mOhms
Vgs – Gate-Source Voltage: – 25 V, + 25 V
Vgs th – Gate-Source Threshold Voltage: 1.4 V
Qg – Gate Charge: 57 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 5 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Series: SI4
Transistor Type: 1 P-Channel
Brand: Vishay Semiconductors
Forward Transconductance – Min: 28 S
Fall Time: 9 ns
Product Type: MOSFET
Rise Time: 12 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 13 ns
Part # Aliases: SI4825DDY-GE3
Unit Weight: 0.026455 oz

Manufacturer Part Number: SI4825DDY-T1-GE3

Manufacturer: Vishay

Datasheet: SI4825DDY-T1-GE3.pdf