SI2318CDS-T1-GE3 Vishay MOSFET N-Ch 40V 5.6A SOT-23-3

Description

SI2318CDS-T1-GE3 Vishay Siliconix Transistor MOSFET N-Channel 40 V 5.6A 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236) T/R RoHS

Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 40 V
Id – Continuous Drain Current: 5.6 A
Rds On – Drain-Source Resistance: 42 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.5 V
Qg – Gate Charge: 2.9 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 2.1 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 8 ns
Product Type: MOSFET
Rise Time: 20 ns
Series: SI2
Pack Quantity:3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 14 ns
Typical Turn-On Delay Time: 7 ns
Part # Aliases: SI2318CDS-T1-BE3 SI2318CDS-GE3
Unit Weight: 0.000282 oz

Manufacturer Part Number: SI2318CDS-T1-GE3

Manufacturer: Vishay