SI2305CDS-T1-GE3 Vishay MOSFETs P-Channel 8 V 5.8A SOT-23

Description

SI2305CDS-T1-GE3 Vishay P-Channel 8 V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 8 V
Id – Continuous Drain Current: 5.8 A
Rds On – Drain-Source Resistance: 35 mOhms
Vgs – Gate-Source Voltage: – 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 12 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.7 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 10 ns
Height: 1.45 mm
Length: 2.9 mm
Product Type: MOSFET
Rise Time: 20 ns
Series: SI2
Reel:3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 20 ns
Width: 1.6 mm
Part # Aliases: SI2305CDS-T1-BE3 SI2305CDS-GE3
Unit Weight: 0.000282 oz

Manufacturer Part Number: SI2305CDS-T1-GE3

Manufacturer: Vishay