SI2302CDS-T1-GE3 Vishay MOSFET N-Ch 20V 2.6A SOT-23-3

Description

SI2302CDS-T1-GE3 Siliconix Vishay Semiconductors Transistor MOSFET N-Channel 20 V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236) T/R RoHS

Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 2.9 A
Rds On – Drain-Source Resistance: 57 mOhms
Vgs – Gate-Source Voltage: 8 V
Vgs th – Gate-Source Threshold Voltage: 850 mV
Qg – Gate Charge: 3.5 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 860 mW
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 1.45 mm
Length: 2.9 mm
Series: SI2
Transistor Type: 1 N-Channel
Width: 1.6 mm
Brand: Vishay Semiconductors
Fall Time: 7 ns
Product Type: MOSFET
Rise Time: 7 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 8 ns
Part # Aliases: SI2302CDS-T1-BE3 SI2302CDS-GE3
Unit Weight: 0.000282 oz

Manufacturer Part Number: SI2302CDS-T1-GE3

Manufacturer: Vishay