RN1101MFV(TPL3) Toshiba BJT Transistor NPN 50V 100mA 3-VESM

Description

RN1101MFV(TPL3) Toshiba Transistor with Built-in Resistor Digital BJT NPN 50V 100mA 3-Pin VESM T/R RoHS

Specifications
Manufacturer: Toshiba
Product Category: Bipolar Transistors – Pre-Biased
Configuration: Single
Transistor Polarity: NPN
Typical Input Resistor: 4.7 kOhms
Typical Resistor Ratio: 1
Mounting Style: SMD/SMT
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 100 mA
Peak DC Collector Current: 100 mA
Pd – Power Dissipation: 150 mW
Maximum Operating Temperature: + 150 C
Series: RN1101
Packaging: Reel
DC Current Gain hFE Max: 30
Brand: Toshiba
Product Type: BJTs – Bipolar Transistors – Pre-Biased
Factory Pack Quantity: 8000
Subcategory: Transistors
Resistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

Manufacturer Part Number: RN1101MFV(TPL3)
Manufacturer: Toshiba