PBSS5130T,215 NXP BJT Transistor PNP 30V 1A SOT-23-3

Description

PBSS5130T,215 NXP Nexperia Bipolar Transistors GP BJT PNP 30V 1A 480mW AEC-Q101 3-Pin SOT-23 T/R RoHS

Specifications
Manufacturer: Nexperia
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: – 30 V
Collector- Base Voltage VCBO: 30 V
Emitter- Base Voltage VEBO: – 5 V
Maximum DC Collector Current: – 1.5 A
Pd – Power Dissipation: 300 mW
Gain Bandwidth Product fT: 200 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Packaging: Cut Tape
Packaging: Reel
DC Current Gain hFE Max: 300 at 100 mA, 2 V
Height: 1 mm
Length: 3 mm
Technology: Si
Width: 1.4 mm
Brand: Nexperia
Continuous Collector Current: – 1 A
DC Collector/Base Gain hfe Min: 300
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: 934057988215
Unit Weight: 0.000282 oz

Manufacturer Part Number: PBSS5130T,215

Manufacturer: NXP