PBSS4130T,215 Nexperia BJT Transistor NPN 30V 1A TO-236AB

Description

PBSS4130T,215 Nexperia Bipolar (BJT) Transistor NPN 30 V 1 A 100MHz 480 mW Surface Mount TO-236AB RoHS

Specifications
Manufacturer: Nexperia
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 30 V
Collector- Base Voltage VCBO: 40 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 1 A
Pd – Power Dissipation: 480 mW
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Packaging: Cut Tape
Packaging: Reel
DC Current Gain hFE Max: 300 at 1 A, 2 V
Height: 1 mm
Length: 3 mm
Technology: Si
Width: 1.4 mm
Brand: Nexperia
DC Collector/Base Gain hfe Min: 300 at 1 A, 2 V, 300 at 500 mA, 2 V, 350 at 100 mA, 2 V
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: 934057985215
Unit Weight: 0.000275 oz

Manufacturer Part Number: PBSS4130T,215

Manufacturer: NXP

Datasheet: PBSS4130T.pdf