ON Semiconductor NTJD5121NT1G Dual N-Channel MOSFET 300mA 60V 6-Pin SOT-363

Description

ON-SEMI NTJD5121NT1G Mosfet Array DUAL -Channel 60V, SC-88, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:295mA, Drain Source Voltage Vds:60V, On Resistance Rds(on):1ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V , RoHS

Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: RoHS Compliant Details
Brand: ON Semiconductor
Id – Continuous Drain Current: 295 mA
Vds – Drain-Source Breakdown Voltage: 60 V
Rds On – Drain-Source Resistance: 1.6 Ohms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 250 mW
Mounting Style: SMD/SMT
Package / Case: SC-88-6
Packaging: Reel
Channel Mode: Enhancement
Configuration: Dual
Fall Time: 32 ns
Minimum Operating Temperature: – 55 C
Rise Time: 34 ns
Series: NTJD5121N
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 22 ns

Manufacturer Part Number: NTJD5121NT1G

Manufacturer: ON Semiconductor

Datasheet: on-semi/NTJD5121N-D.PDF