ON SEMICONDUCTOR MJD127G TRANSISTOR DARL PNP 8A 100V DPAK

ON SEMICONDUCTOR MJD127G TRANSISTOR DARL PNP 8A 100V DPAK

$0.48

ON SEMICONDUCTOR MJD127G Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 1.75 W, -8 A, 12 hFE

SKU: MJD127G Categories: , , Tag:

Description

MJD127: 8.0 A, 100 V PNP Darlington Bipolar Power Transistor

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.

Features
  
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves (“-1” Suffix)
  • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
  • Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series
  • Monolithic Construction With Built-in Base-Emitter Shunt Resistors
  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Complementary Pairs Simplifies Designs
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • PbFree Packages are Available

Manufacturer Part Number: MJD127G

Manufacturer: ON Semiconductor

Datasheet: MJD122-D.PDF

Additional information

manufacturer

Related products