NST65010MW6T1G ON Semiconductor Transistor BJT PNP 65V 0.1A SC-88-6

Description

NST65010MW6T1G ON Semiconductor Bipolar Transistors – BJT Dual Matched PNP 65V 0.1A 380mW 6-Pin SC-88 T/R RoHS

Specifications
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-363-6
Transistor Polarity: PNP
Configuration: Dual
Collector- Emitter Voltage VCEO Max: – 65 V
Collector- Base Voltage VCBO: – 80 V
Emitter- Base Voltage VEBO: – 5 V
Collector-Emitter Saturation Voltage: – 300 mV
Maximum DC Collector Current: – 100 mA
Pd – Power Dissipation: 380 mW
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Packaging: Cut Tape
Packaging: Reel
Technology: Si
Brand: ON Semiconductor
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 0.000265 oz

Manufacturer Part Number: NST65010MW6T1G

Manufacturer: ON Semiconductor