NP100P06PDG-E1-AY Renesas MOSFET P-CH 60V 100A TO-263

Description

RENESAS NP100P06PDG-E1-AY Transistor MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 RoHS
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current – Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 6 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) @ Vds 15000pF @ 10V
Power – Max 1.8W
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263

Manufacturer Part Number: NP100P06PDG-E1-AY

Manufacturer: Renesas

Datasheet: NP100P06PDG.pdf