MJD44H11G ON Semiconductor BJT Transistor NPN 8A 80V DPAK

Description

MJD44H11G ON Semiconductor Bipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Surface Mount DPAK

Specifications
Manufacturer: onsemi
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 80 V
Collector- Base Voltage VCBO: –
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 8 A
Pd – Power Dissipation: 20 W
Gain Bandwidth Product fT: 85 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: MJD44H11
Packaging: Tube
Brand: onsemi
Continuous Collector Current: 8 A
DC Collector/Base Gain hfe Min: 60
Height: 2.38 mm
Length: 6.73 mm
Product Type: BJTs – Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 6.22 mm
Unit Weight: 0.011288 oz

Manufacturer Part Number: MJD44H11G

Manufacturer: ON Semiconductor