MJD122T4G ON Semiconductor Darlington BJT Transistor NPN 8A 100V DPAK

Description

MJD122T4G ON Semiconductor Transistors BJT NPN Bipolar (BJT) Transistor NPN 8A 100V Darlington 4MHz Surface Mount DPA RoHS

Specifications
Manufacturer: onsemi
Product Category: Darlington Transistors
Configuration: Single
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 100 V
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 8 A
Maximum Collector Cut-off Current: 10 uA
Pd – Power Dissipation: 20 W
Mounting Style: SMD/SMT
Package / Case: TO-252-3 (DPAK)
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Series: MJD122
Packaging: Reel
Packaging: Cut Tape
Brand: onsemi
Continuous Collector Current: 8 A
DC Collector/Base Gain hfe Min: 100, 1000
Height: 2.38 mm
Length: 6.73 mm
Product Type: Darlington Transistors
Pack Quantity:2500
Subcategory: Transistors
Width: 6.22 mm
Unit Weight: 0.017637 oz

Manufacturer Part Number: MJD122T4G

Manufacturer: ON Semiconductor

Datasheet: on-semi/MJD122-D.pdf