Diodes MOSFET N-Channel 60 V 115mA (Ta) 370mW SOT-23-3

Description

DIODES, INC / ZETEX 2N7002-7 Diodes MOSFET N-Channel 60 V 115mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 210 mA
Rds On – Drain-Source Resistance: 5 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 223 pC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 540 mW
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 1 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Series: 2N7002
Transistor Type: 1 N-Channel
Type: Enhancement Mode Field Effect Transistor
Width: 1.3 mm
Brand: Diodes Incorporated
Forward Transconductance – Min: 80 mS
Fall Time: 5.6 ns
Product Type: MOSFET
Rise Time: 3 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 7.6 ns
Typical Turn-On Delay Time: 2.8 ns
Unit Weight: 0.000282 oz

Manufacturer Part Number: 2N7002-7
Manufacturer: Diodes Inc.