BC856,215 NXP BJT Transistor PNP 65V 0.1A TO-236AB

Description

BC856,215 NXP Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 250 mW Surface Mount TO-236AB T/R RoHS

Specifications
Manufacturer: Nexperia
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: – 65 V
Collector- Base Voltage VCBO: – 80 V
Emitter- Base Voltage VEBO: – 5 V
Collector-Emitter Saturation Voltage: – 250 mV
Maximum DC Collector Current: – 100 mA
Pd – Power Dissipation: 250 mW
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Packaging: Reel
Packaging: Cut Tape
Brand: Nexperia
DC Collector/Base Gain hfe Min: 125
DC Current Gain hFE Max: 125 at 2 mA, 5 V
Height: 1 mm
Length: 3 mm
Product Type: BJTs – Bipolar Transistors
Reel: 3000
Subcategory: Transistors
Technology: Si
Width: 1.4 mm
Part # Aliases: 933589710215
Unit Weight: 0.000282 oz

Manufacturer Part Number: BC856,215

Manufacturer: NXP